CVD Technology

Chemical Vapour Deposition (CVD)

Chemical vapor deposition (CVD) is a mature technology commonly used in the field of thin film technology. In this process, the solid material is deposited on the heated substrate surface by chemical reaction in the gaseous state, forming a thin film. HCVAC provides a special solution for CVD process of depositing carbon or silicon nitride (SIC) on substrates such as wires and optical fibers.

CVD coating is a high temperature process, which requires a temperature of 500 ° C or above, and high energy input. The vacuum environment in the process chamber can reduce the melting point and avoid unnecessary chemical reactions while ensuring the precursor material to be converted into gas phase.

Different from PVD process, CVD allows the film with complex shape and three-dimensional surface to keep shape. The process can also be used to prepare very fine structures on the surface of silicon wafers.

The prerequisite for CVD coating is to find a suitable precursor, which can provide all the components of the film required in the process chamber. For example, ammonia and dichlorosilane are used as precursors for the silicon nitride deposition process, stannous chloride or organotin compounds, and oxygen or water vapor are used as precursors for depositing SnO2 thermal insulation coatings on flat glass. SnO2 can also protect the glass in the filter system from potential damage due to collision or mechanical stress.

The state of the substrate surface will affect the growth of the film. Only when the process design is reasonable can the metal material grow as expected in the special area of the substrate surface; for example, only in the conductive area but not in the insulation area. In the field of microelectronics, this selective coating makes CVD and PECVD process very popular.

The CVD equipment of HCVAC can be customized according to different customer application scope and corresponding process indexes. We often add CVD / PECVD process module to effectively expand the technical performance of sputtering coating. HCVAC provides customers with excellent product quality, high quality user experience and solid component performance with competitive product price.

Highlights

• Substrate sits directly on electrode which can be heated up to 1200˚C
• Gas injected into process chamber via “showerhead” gas inlet in the top electrode 
• Solid/liquid precursor delivery system for novel processes such as 2D materials MOCVD, ZnO nanowire CVD etc.
• Automatic load lock to transfer sample directly on to a hot table and save time on heating and cooling.
• Plasma enhancement options for lower temperature deposition or plasma assisted conversion or functionalization as well as chamber cleaning.
• Wide range of processes possible in the same chamber