Etch Technology

Focused-ion rapid etch (FIR etch) technology

HCVAC systems, although designed for coating deposition, already have what you need to use them for cleaning and etching as well. Argon (Ar) ions, from a plasma generated with a hot filament plasma source, can be accelerated towards and around the products loaded in the chamber. This ion bombardment etches or cleans the surface. The combination of the plasma source and ARC technology is what enables

focused-ion rapid etch (FIR etch).

Improved productivity and performance due to more efficient and powerful etching

Increased plasma density on the table

Plasma steering provides excellent uniformity

Reactive Ion Etching（RIE）
Reactive Ion Etching (or RIE) is a simple operation and an economical solution for general plasma etching. A single RF plasma source determines both ion density and energy.

Highlights

Multiple choices of etch processes:

• Chemical etching – isotropic, fast rate
• Ion induced etching – anisotropic, medium rate
• Physical etching – anisotropic, slow rate
• Wide applications in semiconductor de-processing and failure analysis