TGV Coating Solution

TGV (Through Glass Via) Technology is a vertical interconnection via technology on glass substrates, widely used in advanced packaging, RF devices, MEMS, 3D integration, and other fields. In the TGV process, PVD (Physical Vapor Deposition) is primarily used for via metallization, forming conductive channels.

PVD Seed Layer:

1. Adhesion Layer:

   • Ti, Ta, Cr: These materials are used to improve the adhesion between the metal layer (Cu) and the glass substrate (typically 5-20nm thick).

   • TaN/TiN: These are used as diffusion barrier layers to prevent Cu migration (typically 3-10nm thick).

2. Conductive Layer (Seed Layer):

   • Cu (100-500nm): This provides the conductive path needed for electroplating.

   • Ru, Mo (as substitutes for Cu): These are used in high-frequency applications to reduce signal loss.

Importance of PVD in TGV Metallization:
PVD plays a crucial role in the metallization of TGV vias, particularly in seed layer deposition for vias with high aspect ratios. As 3D integration, RF devices, and advanced packaging technologies develop, PVD technology will evolve towards higher uniformity, lower temperatures, and better conductivity. This will further drive the application of TGV technology in semiconductors and microsystems.