ALD is a type of CVD technology. It alternately introduces different chemical vapor precursors, conducts self-limiting chemical reactions on the substrate surface, and finally deposits thin films layer by layer, ensuring precise thickness control.

• Precise Thickness Control
  You can think of the process as "adding a blanket one layer at a time," where each cycle deposits a single atomic layer, allowing precise control over film thickness during deposition.
  
  
• Highly Uniform & Conformality
  This step-by-step growth enables ALD to form highly uniform films on complex or high aspect ratios structures, preventing excessive accumulation and ensuring complete coverage in every corner.
  
  
• TALD & PEALD Available

TALD uses thermal sources to heat precursor gases for atomic layer deposition, is suitable for high-temperature deposition. PEALD, on the other hand, uses plasma to excite precursor gases, allowing deposition at lower temperatures, more suitable for temperature-sensitive materials.